The ALD210800ASCL is a 4 N-Channel FET from Advanced Linear Devices with a maximum operating temperature of 70°C and a minimum operating temperature of 0°C. It has a maximum power dissipation of 500mW and a continuous drain current of 80mA. The device is packaged in a SOIC package and is designed for surface mount applications. The ALD210800ASCL has a drain to source breakdown voltage of 10V and a drain to source resistance of 25R.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power500mW
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Technical Specifications
Advanced Linear Devices ALD210800ASCL technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 80mA |
| Drain to Source Breakdown Voltage | 10V |
| Drain to Source Resistance | 25R |
| Drain to Source Voltage (Vdss) | 10.6V |
| FET Type | 4 N-Channel |
| Input Capacitance | 15pF |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | 0°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500mW |
| Rds On Max | 25R |
| Series | EPAD®, Zero Threshold™ |
| Turn-Off Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Advanced Linear Devices ALD210800ASCL Datasheet
Download the complete datasheet for Advanced Linear Devices ALD210800ASCL to view detailed technical specifications.
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