N-channel enhancement mode power MOSFET featuring a 200V drain-source voltage and 10A continuous drain current. This single-element silicon transistor is housed in a TO-220CFM package with 3 through-hole pins and a tab, offering a maximum power dissipation of 1920mW. Key electrical characteristics include a ±20V gate-source voltage, 3V gate threshold voltage, and 260mOhm drain-source resistance at 4.5V. Operating temperature range spans from -55°C to 150°C.
PackageTO-220CFM
MountingThrough Hole
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Technical Specifications
Advanced Power Electronics AP15T20GI-HF technical specifications.
General
Package Family Name
TO-220
Package/Case
TO-220CFM
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.25
Package Width (mm)
4.55
Package Height (mm)
15.6
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
200V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
10A
Material
Si
Maximum Gate Threshold Voltage
3V
Maximum Drain Source Resistance
Typical Gate Charge @ Vgs
45@10VnC
Typical Gate Charge @ 10V
45nC
Typical Input Capacitance @ Vds
1950@25VpF
Maximum Power Dissipation
1920mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Advanced Power Electronics AP15T20GI-HF Datasheet
Download the complete datasheet for Advanced Power Electronics AP15T20GI-HF to view detailed technical specifications.
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