N-channel enhancement mode power MOSFET featuring 100V drain-source voltage and 31.7A continuous drain current. This single-element transistor is housed in a TO-220CFM through-hole package with 3 pins and a tab. Key specifications include a maximum gate-source voltage of ±20V, a maximum drain-source on-resistance of 16.5 mOhm at 10V, and a maximum power dissipation of 1920 mW. Operating temperature range spans from -55°C to 150°C.
PackageTO-220CFM
MountingThrough Hole
Quick Jump:
Technical Specifications
Advanced Power Electronics AP55T10GI-HF technical specifications.
General
| Basic Package Type | Through Hole |
| Package/Case | TO-220CFM |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.25 |
| Package Width (mm) | 4.55 |
| Package Height (mm) | 15.6 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 31.7A |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Drain Source Resistance | 16.5@10VmOhm |
| Typical Gate Charge @ Vgs | 70@10VnC |
| Typical Gate Charge @ 10V | 70nC |
| Typical Input Capacitance @ Vds | 3400@25VpF |
| Maximum Power Dissipation | 1920mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Advanced Power Electronics AP55T10GI-HF Datasheet
Download the complete datasheet for Advanced Power Electronics AP55T10GI-HF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.