N-channel enhancement mode power MOSFET in a TO-251 package. Features 30V drain-source voltage and 70A continuous drain current. Offers low on-resistance of 9mOhm at 10V Vgs. Designed for through-hole mounting with a 3-pin configuration and tab. Operating temperature range from -55°C to 150°C.
PackageTO-251
MountingThrough Hole
Quick Jump:
Technical Specifications
Advanced Power Electronics AP70N03J technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-251 |
| Package/Case | TO-251 |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.55 |
| Package Width (mm) | 2.3 |
| Package Height (mm) | 5.8 |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 70A |
| Maximum Drain Source Resistance | 9@10VmOhm |
| Typical Gate Charge @ Vgs | 30@5VnC |
| Typical Input Capacitance @ Vds | 1600@25VpF |
| Maximum Power Dissipation | 69000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Advanced Power Electronics AP70N03J Datasheet
Download the complete datasheet for Advanced Power Electronics AP70N03J to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.