N-channel enhancement mode power MOSFET featuring 150V drain-source voltage and 26A continuous drain current. This single-element transistor is housed in a TO-220CFM through-hole package with 3 pins and a tab. Key electrical specifications include a maximum gate-source voltage of ±20V, a maximum drain-source on-resistance of 28mΩ at 10V, and a typical gate charge of 125nC at 10V. Operating temperature range spans from -55°C to 150°C.
PackageTO-220CFM
MountingThrough Hole
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Technical Specifications
Advanced Power Electronics AP70T15GI-HF technical specifications.
General
Basic Package Type
Through Hole
Package/Case
TO-220CFM
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.25
Package Width (mm)
4.55
Package Height (mm)
15.6
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
150V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
26A
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Resistance
28@10VmOhm
Typical Gate Charge @ Vgs
125@10VnC
Typical Gate Charge @ 10V
125nC
Typical Input Capacitance @ Vds
7000@25VpF
Maximum Power Dissipation
1920mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Advanced Power Electronics AP70T15GI-HF Datasheet
Download the complete datasheet for Advanced Power Electronics AP70T15GI-HF to view detailed technical specifications.
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