N-channel Silicon Power MOSFET, surface mountable in an 8-pin PMPAK EP package. Features a 30V drain-source voltage, 31A continuous drain current, and low 7mΩ drain-source resistance at 10V. Configuration is single quad drain triple source with enhancement mode channel. Operating temperature range from -55°C to 150°C.
PackagePMPAK EP
MountingSurface Mount
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Technical Specifications
Advanced Power Electronics AP75T03GMT-HF technical specifications.
General
| Basic Package Type | Non-Lead-Frame SMT |
| Package/Case | PMPAK EP |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 4.9 |
| Package Width (mm) | 5.75 |
| Package Height (mm) | 1.1 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 31A |
| Material | Si |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Drain Source Resistance | 7@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 1830@15VpF |
| Maximum Power Dissipation | 5000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Advanced Power Electronics AP75T03GMT-HF Datasheet
Download the complete datasheet for Advanced Power Electronics AP75T03GMT-HF to view detailed technical specifications.
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