N-channel Silicon Power MOSFET, surface mountable in an 8-pin PMPAK EP package. Features a 30V drain-source voltage, 31A continuous drain current, and low 7mΩ drain-source resistance at 10V. Configuration is single quad drain triple source with enhancement mode channel. Operating temperature range from -55°C to 150°C.
PackagePMPAK EP
MountingSurface Mount
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Technical Specifications
Advanced Power Electronics AP75T03GMT-HF technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package/Case
PMPAK EP
Lead Shape
No Lead
Pin Count
8
PCB
8
Package Length (mm)
4.9
Package Width (mm)
5.75
Package Height (mm)
1.1
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
31A
Material
Si
Maximum Gate Threshold Voltage
3V
Maximum Drain Source Resistance
7@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
1830@15VpF
Maximum Power Dissipation
5000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Advanced Power Electronics AP75T03GMT-HF Datasheet
Download the complete datasheet for Advanced Power Electronics AP75T03GMT-HF to view detailed technical specifications.
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