N-channel enhancement mode power MOSFET in a 3-pin DPAK (TO-252AA) surface-mount package. Features a maximum drain-source voltage of 25V and a continuous drain current of 75A. Offers a low drain-source on-resistance of 5mΩ at 10V. Designed with gull-wing leads and a plastic Deca Watt package for efficient heat dissipation.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Advanced Power Electronics AP88LS02H technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-252
Package/Case
DPAK
Package Description
Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.5
Package Width (mm)
5.7
Package Height (mm)
2.3
Seated Plane Height (mm)
2.4
Pin Pitch (mm)
2.3
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-252AA
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
25V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
75A
Maximum Drain Source Resistance
5@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
2070@25VpF
Maximum Power Dissipation
96000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Advanced Power Electronics AP88LS02H Datasheet
Download the complete datasheet for Advanced Power Electronics AP88LS02H to view detailed technical specifications.
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