N-channel enhancement mode Power MOSFET with a 30V drain-source voltage and 21A continuous drain current. Features an 8-pin PMPAK EP surface-mount package with a plastic construction and no leads. Offers a low 4.5mOhm drain-source resistance at 10V, 36nC typical gate charge at 4.5V, and 3800pF typical input capacitance at 15V. Maximum power dissipation is 3130mW, with an operating temperature range of -55°C to 150°C.
PackagePMPAK EP
MountingSurface Mount
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Technical Specifications
Advanced Power Electronics AP9430AGYT-HF technical specifications.
General
| Basic Package Type | Non-Lead-Frame SMT |
| Package/Case | PMPAK EP |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3.1 |
| Package Width (mm) | 3.1 |
| Package Height (mm) | 0.7 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±12V |
| Maximum Continuous Drain Current | 21A |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Drain Source Resistance | 4.5@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 3800@15VpF |
| Maximum Power Dissipation | 3130mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Advanced Power Electronics AP9430AGYT-HF Datasheet
Download the complete datasheet for Advanced Power Electronics AP9430AGYT-HF to view detailed technical specifications.
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