N-channel enhancement mode Power MOSFET with a 30V drain-source voltage and 21A continuous drain current. Features an 8-pin PMPAK EP surface-mount package with a plastic construction and no leads. Offers a low 4.5mOhm drain-source resistance at 10V, 36nC typical gate charge at 4.5V, and 3800pF typical input capacitance at 15V. Maximum power dissipation is 3130mW, with an operating temperature range of -55°C to 150°C.
PackagePMPAK EP
MountingSurface Mount
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Technical Specifications
Advanced Power Electronics AP9430AGYT-HF technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package/Case
PMPAK EP
Lead Shape
No Lead
Pin Count
8
PCB
8
Package Length (mm)
3.1
Package Width (mm)
3.1
Package Height (mm)
0.7
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±12V
Maximum Continuous Drain Current
21A
Maximum Gate Threshold Voltage
3V
Maximum Drain Source Resistance
4.5@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
3800@15VpF
Maximum Power Dissipation
3130mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Advanced Power Electronics AP9430AGYT-HF Datasheet
Download the complete datasheet for Advanced Power Electronics AP9430AGYT-HF to view detailed technical specifications.
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