N-channel enhancement mode power MOSFET, 60V drain-source voltage, 6.9A continuous drain current. Features 40mΩ maximum drain-source on-resistance at 10V Vgs. Housed in an 8-pin SOIC (SOP) surface-mount package with gull-wing leads, measuring 5.05mm x 3.9mm x 1.4mm. Single quad drain triple source configuration. Operating temperature range from -55°C to 150°C.
PackageSO
MountingSurface Mount
Quick Jump:
Technical Specifications
Advanced Power Electronics AP9475M technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SO
Package Description
Small Outline IC
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
5.05
Package Width (mm)
3.9
Package Height (mm)
1.4
Seated Plane Height (mm)
1.55
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Jedec
MS-012AA
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±25V
Maximum Continuous Drain Current
6.9A
Maximum Drain Source Resistance
40@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
1670@25VpF
Maximum Power Dissipation
2500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Advanced Power Electronics AP9475M Datasheet
Download the complete datasheet for Advanced Power Electronics AP9475M to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.