N-channel enhancement mode power MOSFET, 60V drain-source voltage, 4.8A continuous drain current. Features 64mOhm maximum drain-source resistance at 10V, 9nC typical gate charge at 4.5V, and 710pF typical input capacitance at 25V. Housed in an 8-pin SOIC (Small Outline IC) package with gull-wing leads, measuring 5.05mm length, 3.9mm width, and 1.4mm height. Surface mountable with a 1.27mm pin pitch, this plastic package is rated for operation from -55°C to 150°C.
PackageSO
MountingSurface Mount
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Technical Specifications
Advanced Power Electronics AP9478GM technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SO
Package Description
Small Outline IC
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
5.05
Package Width (mm)
3.9
Package Height (mm)
1.4
Seated Plane Height (mm)
1.55
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Jedec
MS-012AA
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±25V
Maximum Continuous Drain Current
4.8A
Maximum Drain Source Resistance
64@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
710@25VpF
Maximum Power Dissipation
2500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Advanced Power Electronics AP9478GM Datasheet
Download the complete datasheet for Advanced Power Electronics AP9478GM to view detailed technical specifications.
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