N-channel enhancement mode power MOSFET featuring 60V drain-source voltage and 4.8A continuous drain current. This 8-pin SOIC package, with gull-wing leads, offers a surface-mount solution with a 1.27mm pin pitch and dimensions of 5.05mm x 3.9mm x 1.4mm. Key electrical characteristics include a maximum drain-source on-resistance of 64mΩ at 10V, typical gate charge of 9nC at 4.5V, and typical input capacitance of 710pF at 25V. Maximum power dissipation is 2500mW, with an operating temperature range of -55°C to 150°C.
PackageSO
MountingSurface Mount
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Technical Specifications
Advanced Power Electronics AP9478M technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SO
Package Description
Small Outline IC
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
5.05
Package Width (mm)
3.9
Package Height (mm)
1.4
Seated Plane Height (mm)
1.55
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Jedec
MS-012AA
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±25V
Maximum Continuous Drain Current
4.8A
Maximum Drain Source Resistance
64@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
710@25VpF
Maximum Power Dissipation
2500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Advanced Power Electronics AP9478M Datasheet
Download the complete datasheet for Advanced Power Electronics AP9478M to view detailed technical specifications.
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