P-channel enhancement mode power MOSFET, silicon, featuring a 40V maximum drain-source voltage and 39A maximum continuous drain current. This single transistor is housed in a TO-251 (IPAK) through-hole package with 3 pins and a tab, measuring 6.55mm in length, 2.3mm in width, and 5.8mm in height. Key electrical characteristics include a ±20V maximum gate-source voltage, 3V maximum gate threshold voltage, and 18mOhm maximum drain-source resistance at 10V. The component offers typical gate charge of 27nC at 4.5V and typical input capacitance of 3000pF at 25V, with a maximum power dissipation of 1130mW.
PackageTO-251
MountingThrough Hole
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Technical Specifications
Advanced Power Electronics AP9561AGJ-HF technical specifications.
General
Package Family Name
IPAK
Package/Case
TO-251
Package Description
Transistor Outline Package
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
6.55
Package Width (mm)
2.3
Package Height (mm)
5.8
Pin Pitch (mm)
2.3
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-251AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
40V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
39A
Material
Si
Maximum Gate Threshold Voltage
3V
Maximum Drain Source Resistance
18@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
3000@25VpF
Maximum Power Dissipation
1130mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Advanced Power Electronics AP9561AGJ-HF Datasheet
Download the complete datasheet for Advanced Power Electronics AP9561AGJ-HF to view detailed technical specifications.
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