AP9561AGJ-HF

P-channel enhancement mode power MOSFET, silicon, featuring a 40V maximum drain-source voltage and 39A maximum continuous drain current. This single transistor is housed in a TO-251 (IPAK) through-hole package with 3 pins and a tab, measuring 6.55mm in length, 2.3mm in width, and 5.8mm in height. Key electrical characteristics include a ±20V maximum gate-source voltage, 3V maximum gate threshold voltage, and 18mOhm maximum drain-source resistance at 10V. The component offers typical gate charge of 27nC at 4.5V and typical input capacitance of 3000pF at 25V, with a maximum power dissipation of 1130mW.