N-channel enhancement mode power MOSFET in a TO-220 package, featuring a 30V drain-source voltage and 200A continuous drain current. This single-element transistor offers a low drain-source on-resistance of 2.8 mΩ at 10V. With a maximum power dissipation of 156W, it is designed for through-hole mounting and operates across a temperature range of -55°C to 150°C.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Advanced Power Electronics AP98T03GP-HF technical specifications.
General
| Package/Case | TO-220 |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 8.85 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 200A |
| Maximum Gate Threshold Voltage | 2.5V |
| Maximum Drain Source Resistance | 2.8@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 4960@25VpF |
| Maximum Power Dissipation | 156000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Advanced Power Electronics AP98T03GP-HF Datasheet
Download the complete datasheet for Advanced Power Electronics AP98T03GP-HF to view detailed technical specifications.
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