N-channel enhancement mode power MOSFET in a DPAK (TO-252AA) surface-mount package. Features 60V drain-source voltage, 25A continuous drain current, and low 36mOhm drain-source resistance at 10V Vgs. This single-element transistor offers a typical gate charge of 18nC at 4.5V Vgs and 1700pF input capacitance at 25V Vds, with a maximum power dissipation of 39W. The lead-frame SMT package has a 3-pin configuration with gull-wing leads and a tab for enhanced thermal performance.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Advanced Power Electronics AP9971H technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-252
Package/Case
DPAK
Package Description
Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.5
Package Width (mm)
5.7
Package Height (mm)
2.3
Seated Plane Height (mm)
2.4
Pin Pitch (mm)
2.3
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-252AA
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
25A
Maximum Drain Source Resistance
36@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
1700@25VpF
Maximum Power Dissipation
39000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Advanced Power Electronics AP9971H Datasheet
Download the complete datasheet for Advanced Power Electronics AP9971H to view detailed technical specifications.
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