N-channel enhancement mode power MOSFET in a TO-220 package, featuring a 60V drain-source voltage and 25A continuous drain current. This single-element transistor offers a low 36mΩ drain-source on-resistance at 10V Vgs and a typical gate charge of 18nC at 4.5V Vgs. With a maximum power dissipation of 39000mW, it operates across a temperature range of -55°C to 150°C. The through-hole mounting component has a 3-pin configuration with an integrated tab.
PackageTO-220
MountingThrough Hole
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Technical Specifications
Advanced Power Electronics AP9971P technical specifications.
General
Package/Case
TO-220
Package Description
Transistor Outline Package
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10
Package Width (mm)
4.5
Package Height (mm)
8.85
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
25A
Maximum Drain Source Resistance
36@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
1700@25VpF
Maximum Power Dissipation
39000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Advanced Power Electronics AP9971P Datasheet
Download the complete datasheet for Advanced Power Electronics AP9971P to view detailed technical specifications.
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