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Technical Specifications
Advanced Power Electronics AP9979GJ technical specifications.
General
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±25V
Maximum Continuous Drain Current
20A
Maximum Drain Source Resistance
48@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
990@25VpF
Maximum Power Dissipation
34700mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
EU RoHS
Yes
ECCN
EAR99
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Advanced Power Electronics AP9979GJ Datasheet
Download the complete datasheet for Advanced Power Electronics AP9979GJ to view detailed technical specifications.
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