Eight-element NPN bipolar junction transistor array, designed for high-current switching applications. Features a collector current of 500mA and a collector-emitter breakdown voltage of 50V. Packaged in an 18-pin DIP for easy integration into printed circuit boards. Constructed from silicon with a plastic/epoxy encapsulation.
Allegro Microsystems ULN2803A technical specifications.
Download the complete datasheet for Allegro Microsystems ULN2803A to view detailed technical specifications.
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