Eight-element NPN bipolar junction transistor array, packaged in an 18-pin DIP. Features a collector current of 0.5A and a collector-emitter breakdown voltage of 50V. Designed for power applications with silicon construction and MS-001AC plastic/epoxy encapsulation.
Quick Jump:
Technical Specifications
Allegro Microsystems ULN2804A technical specifications.
General
RoHS Compliant
No
Compliance
RoHS
Not Compliant
Datasheet
Allegro Microsystems ULN2804A Datasheet
Download the complete datasheet for Allegro Microsystems ULN2804A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.