N-Channel Silicon Metal-oxide Semiconductor FET, designed for surface mounting in a TO-236-3 package. Features a continuous drain current of 5.7A and a drain-to-source breakdown voltage of 30V. Offers a low drain-to-source on-resistance of 18mΩ, with a maximum of 26.5mΩ. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1.4W. Includes a threshold voltage of 650mV and input capacitance of 630pF. This component is lead-free and RoHS compliant.
PackageTO-236-3
MountingSurface Mount
Quick Jump:
Technical Specifications
Alpha & Omega AO3400A technical specifications.
General
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 5.7A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 30V |
| Height | 1.25mm |
| Input Capacitance | 630pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Packaging | Cut Tape |
| Rds On Max | 26.5mR |
| RoHS Compliant | Yes |
| Threshold Voltage | 650mV |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 3ns |
Compliance
| RoHS | Compliant |
Datasheet
Alpha & Omega AO3400A Datasheet
Download the complete datasheet for Alpha & Omega AO3400A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
