P-channel, silicon, metal-oxide semiconductor FET designed for small signal applications. Features a 20V drain-to-source voltage (Vdss) and a continuous drain current (ID) of 3.5A. Surface mountable in a TO-236-3 package, this single-element transistor offers a low on-resistance (Rds On Max) of 85mR and a maximum power dissipation of 1.4W. Operating across a temperature range of -55°C to 150°C, it is lead-free and RoHS compliant.
PackageTO-236-3
MountingSurface Mount
Power1.4W
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Technical Specifications
Alpha & Omega AO3419 technical specifications.
General
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance | 400pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 1.4W |
| Radiation Hardening | No |
| Rds On Max | 85mR |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Alpha & Omega AO3419 Datasheet
Download the complete datasheet for Alpha & Omega AO3419 to view detailed technical specifications.
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