P-Channel Silicon Metal-Oxide Semiconductor FET, a single-element JFET designed for surface mounting in an SOIC package. Features a continuous drain current of 6.2A and a drain-to-source voltage of 60V. Offers a gate-to-source voltage of 20V and a low on-resistance of 40mΩ. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 3.1W. Input capacitance is 2.9nF, and the component is RoHS compliant.
PackageSOIC
MountingSurface Mount
Power3.1W
Quick Jump:
Technical Specifications
Alpha & Omega AO4421 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6.2A |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.9nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 3.1W |
| Radiation Hardening | No |
| Rds On Max | 40mR |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Alpha & Omega AO4421 Datasheet
Download the complete datasheet for Alpha & Omega AO4421 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
