P-channel, Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for small signal applications. Features a Drain to Source Voltage (Vdss) of 60V and a continuous Drain Current (ID) of 4A. Offers a low on-resistance (Rds On Max) of 100mR. Packaged in an SOIC case for surface mounting, with an operating temperature range of -55°C to 150°C. Includes 1.12nF input capacitance and a maximum power dissipation of 3.1W. RoHS compliant.
PackageSOIC
MountingSurface Mount
Power3.1W
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Technical Specifications
Alpha & Omega AO4441 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 60V |
| Input Capacitance | 1.12nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 3.1W |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Alpha & Omega AO4441 Datasheet
Download the complete datasheet for Alpha & Omega AO4441 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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