N-Channel Silicon Metal-oxide Semiconductor FET, designed for small signal applications. Features a continuous drain current of 10.5A and a drain-to-source voltage of 30V. Offers a low on-resistance (Rds On Max) of 14mR and a gate-to-source voltage of 20V. This surface-mount device, housed in an SOIC-8 package, operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 3.1W. Input capacitance is rated at 1.2nF.
PackageSOIC
MountingSurface Mount
Power3.1W
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Technical Specifications
Alpha & Omega AO4468 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 10.5A |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.2nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 3.1W |
| Rds On Max | 14mR |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Alpha & Omega AO4468 Datasheet
Download the complete datasheet for Alpha & Omega AO4468 to view detailed technical specifications.
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