
P-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, SOIC-8 package, designed for surface mounting. Features a continuous drain current of 7.1A and a drain-to-source voltage of 30V. Offers a gate-to-source voltage of 20V and a low on-resistance (Rds On Max) of 25mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2W. Input capacitance is 1.25nF. RoHS compliant.
Alpha & Omega AO4813 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7.1A |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.25nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Packaging | Cut Tape |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| RoHS Compliant | Yes |
| RoHS | Compliant |
Download the complete datasheet for Alpha & Omega AO4813 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
