P-channel silicon Metal-oxide Semiconductor FET for small signal applications. Features a 30V drain-to-source voltage (Vdss) and 5A continuous drain current (ID). Offers a low on-resistance (Rds On Max) of 52mΩ and a gate-to-source voltage (Vgs) of 20V. This 1-element transistor is housed in a TSOP package for surface mounting, with a maximum power dissipation of 2W and an operating temperature range of -55°C to 150°C. Input capacitance is 840pF. RoHS compliant.
PackageTSOP
MountingSurface Mount
Power2W
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Technical Specifications
Alpha & Omega AO6405 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 840pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 2W |
| Rds On Max | 52mR |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Alpha & Omega AO6405 Datasheet
Download the complete datasheet for Alpha & Omega AO6405 to view detailed technical specifications.
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