
P-channel silicon Metal-oxide Semiconductor FET for small signal applications. Features a 30V drain-to-source voltage (Vdss) and 5A continuous drain current (ID). Offers a low on-resistance (Rds On Max) of 52mΩ and a gate-to-source voltage (Vgs) of 20V. This 1-element transistor is housed in a TSOP package for surface mounting, with a maximum power dissipation of 2W and an operating temperature range of -55°C to 150°C. Input capacitance is 840pF. RoHS compliant.
Alpha & Omega AO6405 technical specifications.
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