P-channel silicon Metal-oxide Semiconductor FET for small signal applications. Features a 30V drain-to-source voltage (Vdss) and 5A continuous drain current (ID). Offers a low on-resistance (Rds On Max) of 52mΩ and a gate-to-source voltage (Vgs) of 20V. This 1-element transistor is housed in a TSOP package for surface mounting, with a maximum power dissipation of 2W and an operating temperature range of -55°C to 150°C. Input capacitance is 840pF. RoHS compliant.
PackageTSOP
MountingSurface Mount
Power2W
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Technical Specifications
Alpha & Omega AO6405 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
5A
Drain to Source Voltage (Vdss)
30V
Gate to Source Voltage (Vgs)
20V
Input Capacitance
840pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
2W
Rds On Max
52mR
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Alpha & Omega AO6405 Datasheet
Download the complete datasheet for Alpha & Omega AO6405 to view detailed technical specifications.
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