N-channel enhancement mode power MOSFET with a 600V drain-source voltage and 2A continuous drain current. Features a 3-pin DPAK (TO-252) surface mount package with a plastic construction. Offers a low drain-source on-resistance of 4400 mOhm at 10V and a typical gate charge of 9.5 nC. Maximum power dissipation is 56.8W, with an operating temperature range of -50°C to 150°C.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Alpha & Omega AOD2N60 technical specifications.
General
Package Family Name
TO-252
Package/Case
DPAK
Package Description
Deca Watt Package
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.6
Package Width (mm)
6.1
Package Height (mm)
2.29
Pin Pitch (mm)
2.29
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
2A
Maximum Drain Source Resistance
4400@10VmOhm
Typical Gate Charge @ Vgs
9.5@10VnC
Typical Gate Charge @ 10V
9.5nC
Typical Input Capacitance @ Vds
270@25VpF
Maximum Power Dissipation
56800mW
Min Operating Temperature
-50°C
Max Operating Temperature
150°C
Compliance
Cage Code
6USE7
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Alpha & Omega AOD2N60 Datasheet
Download the complete datasheet for Alpha & Omega AOD2N60 to view detailed technical specifications.
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