N-Channel Power MOSFET, 30V Vds, 70A continuous drain current, and 3mΩ Rds(on). This silicon Metal-oxide Semiconductor FET features a TO-252 DPAK-3/2 package for surface mounting, with a maximum power dissipation of 2.5W. It offers a wide operating temperature range from -55°C to 175°C and includes 2.01nF input capacitance. RoHS compliant and available in cut tape packaging.
Alpha & Omega AOD508 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 70A |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance | 2.01nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 3mR |
| RoHS Compliant | Yes |
| RoHS | Compliant |
Download the complete datasheet for Alpha & Omega AOD508 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.