N-channel enhancement mode power MOSFET featuring a 520V drain-source voltage and 9A continuous drain current. This single-element transistor is housed in a DPAK (TO-252) surface-mount package with 3 pins and a tab, offering a maximum power dissipation of 178W. Key electrical characteristics include a ±30V gate-source voltage, 4.5V gate threshold voltage, and 860mΩ drain-source resistance at 10V. Operating temperature range spans from -55°C to 150°C.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Alpha & Omega AOD9N52 technical specifications.
General
| Package Family Name | TO-252 |
| Package/Case | DPAK |
| Package Description | Deca Watt Package |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.6 |
| Package Width (mm) | 6.1 |
| Package Height (mm) | 2.29 |
| Pin Pitch (mm) | 2.29 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 520V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 9A |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Drain Source Resistance | 860@10VmOhm |
| Typical Gate Charge @ Vgs | 19.5@10VnC |
| Typical Gate Charge @ 10V | 19.5nC |
| Typical Input Capacitance @ Vds | 962@25VpF |
| Maximum Power Dissipation | 178000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 6USE7 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Alpha & Omega AOD9N52 Datasheet
Download the complete datasheet for Alpha & Omega AOD9N52 to view detailed technical specifications.
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