N-channel enhancement mode power MOSFET featuring a 520V drain-source voltage and 9A continuous drain current. This single-element transistor is housed in a DPAK (TO-252) surface-mount package with 3 pins and a tab, offering a maximum power dissipation of 178W. Key electrical characteristics include a ±30V gate-source voltage, 4.5V gate threshold voltage, and 860mΩ drain-source resistance at 10V. Operating temperature range spans from -55°C to 150°C.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Alpha & Omega AOD9N52 technical specifications.
General
Package Family Name
TO-252
Package/Case
DPAK
Package Description
Deca Watt Package
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.6
Package Width (mm)
6.1
Package Height (mm)
2.29
Pin Pitch (mm)
2.29
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
520V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
9A
Maximum Gate Threshold Voltage
4.5V
Maximum Drain Source Resistance
860@10VmOhm
Typical Gate Charge @ Vgs
19.5@10VnC
Typical Gate Charge @ 10V
19.5nC
Typical Input Capacitance @ Vds
962@25VpF
Maximum Power Dissipation
178000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
6USE7
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Alpha & Omega AOD9N52 Datasheet
Download the complete datasheet for Alpha & Omega AOD9N52 to view detailed technical specifications.
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