Alpha & Omega
AOI4N60
Power Field-Effect Transistor, 4A I(D), 600V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251A, GREEN, IPAK-3
PackageTO-251-3
MountingThrough Hole
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Technical Specifications
Alpha & Omega AOI4N60 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 600V |
| Input Capacitance | 640pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 104W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Rds On Max | 2.3R |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Alpha & Omega AOI4N60 Datasheet
Download the complete datasheet for Alpha & Omega AOI4N60 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.