AON2260

N-Channel Silicon Metal-Oxide Semiconductor FET, 60V Drain to Source Voltage (Vdss), 6A Continuous Drain Current (ID), and 44mΩ Max On-Resistance (Rds On). This surface mount DFN-6 packaged power field-effect transistor features 426pF input capacitance and a maximum power dissipation of 2.8W. Operating across a temperature range of -55°C to 150°C, this RoHS compliant component is supplied in cut tape packaging.