N-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 24A continuous drain current. This single-element transistor is housed in an 8-pin DFN EP package with exposed pad, measuring 5.2mm x 5.55mm x 0.95mm. It offers a low 5.5mOhm drain-source resistance at 10V gate-source voltage and supports surface mounting. Key electrical characteristics include a typical gate charge of 27nC at 10V and input capacitance of 1840pF at 15V drain-source voltage.
PackageDFN EP
MountingSurface Mount
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Technical Specifications
Alpha & Omega AON6202 technical specifications.
General
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | DFN |
| Package/Case | DFN EP |
| Package Description | Dual Flat Package No Lead, Exposed Pad |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5.2 |
| Package Width (mm) | 5.55 |
| Package Height (mm) | 0.95(Max) |
| Seated Plane Height (mm) | 0.95 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 24A |
| Maximum Drain Source Resistance | 5.5@10VmOhm |
| Typical Gate Charge @ Vgs | 27@10V|[email protected]nC |
| Typical Gate Charge @ 10V | 27nC |
| Typical Input Capacitance @ Vds | 1840@15VpF |
| Maximum Power Dissipation | 35000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 6USE7 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Alpha & Omega AON6202 Datasheet
Download the complete datasheet for Alpha & Omega AON6202 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.