N-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 24A continuous drain current. This single MOSFET is housed in an 8-pin DFN EP package with a 5.2mm x 5.55mm footprint and 0.95mm maximum height, designed for surface mounting. Key electrical characteristics include a maximum drain-source on-resistance of 6.5 mOhm at 10V, typical gate charge of 19.6 nC, and typical input capacitance of 1390 pF. The component offers a maximum power dissipation of 31000 mW and operates across a temperature range of -55°C to 150°C.
PackageDFN EP
MountingSurface Mount
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Technical Specifications
Alpha & Omega AON6206 technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
DFN
Package/Case
DFN EP
Package Description
Dual Flat Package No Lead, Exposed Pad
Lead Shape
No Lead
Pin Count
8
PCB
8
Package Length (mm)
5.2
Package Width (mm)
5.55
Package Height (mm)
0.95(Max)
Seated Plane Height (mm)
0.95
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
24A
Maximum Drain Source Resistance
6.5@10VmOhm
Typical Gate Charge @ Vgs
19.6@10VnC
Typical Gate Charge @ 10V
19.6nC
Typical Input Capacitance @ Vds
1390@15VpF
Maximum Power Dissipation
31000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
6USE7
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Alpha & Omega AON6206 Datasheet
Download the complete datasheet for Alpha & Omega AON6206 to view detailed technical specifications.
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