N-channel enhancement mode power MOSFET featuring 100V drain-source voltage and 85A continuous drain current. This single MOSFET offers a low 4.6mOhm drain-source resistance at 10V gate-source voltage. Housed in an 8-pin DFN EP package with exposed pad, it supports surface mounting and has a package height of 0.95mm max. Key electrical characteristics include a typical gate charge of 63nC at 10V and input capacitance of 4600pF at 50V. Operating temperature range spans from -55°C to 150°C.
PackageDFN EP
MountingSurface Mount
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Technical Specifications
Alpha & Omega AON6290 technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
DFN
Package/Case
DFN EP
Package Description
Dual Flat Package No Lead, Exposed Pad
Lead Shape
No Lead
Pin Count
8
PCB
8
Package Length (mm)
5.2
Package Width (mm)
5.55
Package Height (mm)
0.95(Max)
Seated Plane Height (mm)
0.95
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
TMOS
Maximum Drain Source Voltage
100V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
85A
Maximum Gate Threshold Voltage
3.4V
Maximum Drain Source Resistance
4.6@10VmOhm
Typical Gate Charge @ Vgs
63@10V|[email protected]nC
Typical Gate Charge @ 10V
63nC
Typical Input Capacitance @ Vds
4600@50VpF
Maximum Power Dissipation
208000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
6USE7
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Alpha & Omega AON6290 Datasheet
Download the complete datasheet for Alpha & Omega AON6290 to view detailed technical specifications.
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