N-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 85A continuous drain current. This single element transistor is housed in an 8-pin DFN package with a dual flat package no lead design, measuring 5.2mm x 5.55mm with a 0.95mm height. It offers a low drain-source on-resistance of 2.2mOhm at 10V and supports surface mounting. Key electrical characteristics include a typical gate charge of 124nC at 10V and input capacitance of 7150pF at 15V, with a maximum power dissipation of 104W.
PackageDFN
MountingSurface Mount
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Technical Specifications
Alpha & Omega AON6722 technical specifications.
General
| Package Family Name | DFN |
| Package/Case | DFN |
| Package Description | Dual Flat Package No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5.2 + 0.3(Max) |
| Package Width (mm) | 5.55 |
| Package Height (mm) | 0.95 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±12V |
| Maximum Continuous Drain Current | 85A |
| Maximum Drain Source Resistance | 2.2@10VmOhm |
| Typical Gate Charge @ Vgs | 124@10V|[email protected]nC |
| Typical Gate Charge @ 10V | 124nC |
| Typical Input Capacitance @ Vds | 7150@15VpF |
| Maximum Power Dissipation | 104000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 6USE7 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Alpha & Omega AON6722 Datasheet
Download the complete datasheet for Alpha & Omega AON6722 to view detailed technical specifications.
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