N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 37A/48A continuous drain current. This dual MOSFET is housed in an 8-pin DFN EP package with an exposed pad, measuring 5.2mm x 5.55mm x 0.95mm. Key electrical characteristics include a maximum drain-source on-resistance of 14.4 mOhm at 10V, typical gate charge of 7.4 nC at 10V, and typical input capacitance of 510 pF at 15V. Maximum power dissipation reaches 1900mW/2000mW, with an operating temperature range of -55°C to 150°C.
PackageDFN EP
MountingSurface Mount
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Technical Specifications
Alpha & Omega AON6906 technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
DFN
Package/Case
DFN EP
Package Description
Dual Flat Package No Lead, Exposed Pad
Lead Shape
No Lead
Pin Count
8
PCB
8
Package Length (mm)
5.2
Package Width (mm)
5.55
Package Height (mm)
0.95
Package Material
Plastic
Mounting
Surface Mount
Configuration
Dual
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
37@Q 1|48@Q 2A
Maximum Drain Source Resistance
14.4@10VmOhm
Typical Gate Charge @ Vgs
7.4@10VnC
Typical Gate Charge @ 10V
7.4nC
Typical Input Capacitance @ Vds
510@15VpF
Maximum Power Dissipation
1900@Q 1|2000@Q 2mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
6USE7
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Alpha & Omega AON6906 Datasheet
Download the complete datasheet for Alpha & Omega AON6906 to view detailed technical specifications.
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