N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 37A/48A continuous drain current. This dual MOSFET is housed in an 8-pin DFN EP package with an exposed pad, measuring 5.2mm x 5.55mm x 0.95mm. Key electrical characteristics include a maximum drain-source on-resistance of 14.4 mOhm at 10V, typical gate charge of 7.4 nC at 10V, and typical input capacitance of 510 pF at 15V. Maximum power dissipation reaches 1900mW/2000mW, with an operating temperature range of -55°C to 150°C.
PackageDFN EP
MountingSurface Mount
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Technical Specifications
Alpha & Omega AON6906 technical specifications.
General
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | DFN |
| Package/Case | DFN EP |
| Package Description | Dual Flat Package No Lead, Exposed Pad |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5.2 |
| Package Width (mm) | 5.55 |
| Package Height (mm) | 0.95 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 37@Q 1|48@Q 2A |
| Maximum Drain Source Resistance | 14.4@10VmOhm |
| Typical Gate Charge @ Vgs | 7.4@10VnC |
| Typical Gate Charge @ 10V | 7.4nC |
| Typical Input Capacitance @ Vds | 510@15VpF |
| Maximum Power Dissipation | 1900@Q 1|2000@Q 2mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 6USE7 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Alpha & Omega AON6906 Datasheet
Download the complete datasheet for Alpha & Omega AON6906 to view detailed technical specifications.
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