N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and 8-pin DFN EP package. This dual MOSFET offers a maximum continuous drain current of 46A or 80A depending on the configuration, with a low drain-source on-resistance of 8.9 mOhm at 10V. Key specifications include a typical gate charge of 5.7nC at 4.5V and 12.5nC at 10V, and an input capacitance of 850pF at 15V. The surface-mount DFN EP package measures 5.2mm x 5.55mm x 0.95mm, supporting a wide operating temperature range from -55°C to 150°C.
PackageDFN EP
MountingSurface Mount
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Technical Specifications
Alpha & Omega AON6908 technical specifications.
General
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | DFN |
| Package/Case | DFN EP |
| Package Description | Dual Flat Package No Lead, Exposed Pad |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5.2 |
| Package Width (mm) | 5.55 |
| Package Height (mm) | 0.95 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 46@Q 1|80@Q 2A |
| Maximum Drain Source Resistance | 8.9@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]|12.5@10VnC |
| Typical Gate Charge @ 10V | 12.5nC |
| Typical Input Capacitance @ Vds | 850@15VpF |
| Maximum Power Dissipation | 1900@Q 1|2100@Q 2mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 6USE7 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Alpha & Omega AON6908 Datasheet
Download the complete datasheet for Alpha & Omega AON6908 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.