
N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and dual configuration. This surface-mount component is housed in an 8-pin DFN-B EP package with dimensions of 5.2mm x 5.55mm x 0.95mm (Max). It offers a maximum continuous drain current of 32A or 44A, with low drain-source on-resistance of 4.9mOhm or 2mOhm at 10V. Operating temperature range is -55°C to 150°C.
Alpha & Omega AON6936 technical specifications.
| Package/Case | DFN-B EP |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5.2 |
| Package Width (mm) | 5.55 |
| Package Height (mm) | 0.95(Max) |
| Seated Plane Height (mm) | 0.9 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 32@Q 1|44@Q 2A |
| Maximum Gate Threshold Voltage | 2.5@Q 1|2.3@Q 2V |
| Maximum Drain Source Resistance | 4.9@10V@Q 1|2@10V@Q 2mOhm |
| Typical Gate Charge @ Vgs | 17.4@10V|[email protected]@Q 1|63.7@10V|[email protected]@Q 2nC |
| Typical Gate Charge @ 10V | 17.4@Q 1|63.7@Q 2nC |
| Typical Input Capacitance @ Vds | 984@15V@Q 1|4178@15V@Q 2pF |
| Maximum Power Dissipation | 31000@Q 1|83000@Q 2mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 6USE7 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Alpha & Omega AON6936 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.