N-channel enhancement mode power MOSFET featuring a 30V drain-source voltage and dual configuration. This surface-mount component is housed in an 8-pin DFN-B EP package with dimensions of 5.2mm x 5.55mm x 0.95mm (Max). It offers a maximum continuous drain current of 32A or 44A, with low drain-source on-resistance of 4.9mOhm or 2mOhm at 10V. Operating temperature range is -55°C to 150°C.
PackageDFN-B EP
MountingSurface Mount
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Technical Specifications
Alpha & Omega AON6936 technical specifications.
General
Package/Case
DFN-B EP
Pin Count
8
PCB
8
Package Length (mm)
5.2
Package Width (mm)
5.55
Package Height (mm)
0.95(Max)
Seated Plane Height (mm)
0.9
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Dual
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
32@Q 1|44@Q 2A
Maximum Gate Threshold Voltage
2.5@Q 1|2.3@Q 2V
Maximum Drain Source Resistance
4.9@10V@Q 1|2@10V@Q 2mOhm
Typical Gate Charge @ Vgs
Typical Gate Charge @ 10V
17.4@Q 1|63.7@Q 2nC
Typical Input Capacitance @ Vds
984@15V@Q 1|4178@15V@Q 2pF
Maximum Power Dissipation
31000@Q 1|83000@Q 2mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
6USE7
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Alpha & Omega AON6936 Datasheet
Download the complete datasheet for Alpha & Omega AON6936 to view detailed technical specifications.
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