N-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 28A/36A continuous drain current. This dual MOSFET is housed in an 8-pin DFN EP package with exposed pad, measuring 5x6mm, suitable for surface mounting. Key specifications include a maximum gate-source voltage of ±20V, low drain-source on-resistance of 5.2mOhm/3.8mOhm at 10V, and typical gate charge values of 15.7nC/29nC at 10V. Maximum power dissipation reaches 31000mW/33000mW, with an operating temperature range of -55°C to 150°C.
PackageDFN EP
MountingSurface Mount
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Technical Specifications
Alpha & Omega AON6973 technical specifications.
General
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | DFN |
| Package/Case | DFN EP |
| Package Description | Dual Flat Package No Lead, Exposed Pad |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5 |
| Package Width (mm) | 6 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 28@Q 1|36@Q 2A |
| Maximum Gate Threshold Voltage | 2.2@Q 1|2.4@Q 2V |
| Maximum Drain Source Resistance | 5.2@10V@Q 1|3.8@10V@Q 2mOhm |
| Typical Gate Charge @ Vgs | 15.7@10V|[email protected]@Q 1|29@10V|[email protected]@Q 2nC |
| Typical Gate Charge @ 10V | 15.7@Q 1|29@Q 2nC |
| Typical Input Capacitance @ Vds | 951@15V@Q 1|1975@15V@Q 2pF |
| Maximum Power Dissipation | 31000@Q 1|33000@Q 2mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 6USE7 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Alpha & Omega AON6973 Datasheet
Download the complete datasheet for Alpha & Omega AON6973 to view detailed technical specifications.
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