
N-Channel Power MOSFET, 30V Drain-to-Source Voltage (Vdss) and 32A Continuous Drain Current (ID). Features low 3mΩ Rds On resistance and 1.835nF input capacitance. Designed for surface mounting in a DFN package, this silicon Metal-oxide Semiconductor FET offers a maximum power dissipation of 62.5W and operates within a temperature range of -55°C to 150°C. It is lead-free and RoHS compliant.
Alpha & Omega AON7508 technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 32A |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance | 1.835nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 62.5W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 3mR |
| RoHS Compliant | Yes |
| RoHS | Compliant |
Download the complete datasheet for Alpha & Omega AON7508 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
