The AON7934 is a dual N-channel enhancement MOSFET from Alpha & Omega. It is packaged in a DFN-A EP package and features two channels with maximum drain source voltages of 30V. The maximum continuous drain currents are 16A for Q1 and 18A for Q2. The maximum gate source voltage is ±20V. The typical gate charge is 8nC at 10V for Q1 and 12.9nC at 10V for Q2. The maximum power dissipation is 23,000mW for Q1 and 25,000mW for Q2. The operating temperature range is from -55°C to 150°C.
PackageDFN-A EP
Quick Jump:
Technical Specifications
Alpha & Omega AON7934 technical specifications.
General
| Package/Case | DFN-A EP |
| Configuration | Dual |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 16@Q 1|18@Q 2A |
| Maximum Gate Threshold Voltage | 2.2V |
| Maximum Drain Source Resistance | 10.2@10V@Q 1|7.7@10V@Q 2mOhm |
| Typical Gate Charge @ Vgs | 8@10V|[email protected]@Q 1|12.9@10V|[email protected]@Q 2nC |
| Typical Gate Charge @ 10V | 8@Q 1|12.9@Q 2nC |
| Typical Input Capacitance @ Vds | 485@15V@Q 1|807@15V@Q 2pF |
| Maximum Power Dissipation | 23000@Q 1|25000@Q 2mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 6USE7 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Alpha & Omega AON7934 Datasheet
Download the complete datasheet for Alpha & Omega AON7934 to view detailed technical specifications.
No datasheet is available for this part.