AOTF10N65

N-channel enhancement mode power MOSFET featuring a 650V drain-source voltage and 10A continuous drain current. This single-element transistor is housed in a TO-220F package with a 3-pin through-hole configuration and a tab. Key electrical characteristics include a maximum drain-source resistance of 1000 mOhm at 10V, typical gate charge of 27.7 nC at 10V, and typical input capacitance of 1369 pF at 25V. Maximum power dissipation is 50W, with an operating temperature range from -55°C to 150°C.