Alpha & Omega
AOTF11S60L
Power Field-Effect Transistor, 11A I(D), 600V, 0.399ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220F, 3 PIN
PackageTO-220-3
MountingThrough Hole
Power38W
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Technical Specifications
Alpha & Omega AOTF11S60L technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 600V |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 545pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 38W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 38W |
| Radiation Hardening | No |
| Rds On Max | 399mR |
| RoHS Compliant | Yes |
| Series | aMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Alpha & Omega AOTF11S60L Datasheet
Download the complete datasheet for Alpha & Omega AOTF11S60L to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.