N-channel enhancement mode power MOSFET featuring 700V drain-source voltage and 7A continuous drain current. This through-hole component is housed in a TO-220F package with a 3-pin configuration and a tab. Key specifications include a maximum drain-source on-resistance of 1800mΩ at 10V, typical gate charge of 20.5nC at 10V, and typical input capacitance of 978pF at 25V. Maximum power dissipation is 38.5W, with an operating temperature range of -55°C to 150°C.
Alpha & Omega AOTF7N70 technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220F |
| Package Description | Transistor Outline Package Fullpak |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.16 |
| Package Width (mm) | 4.7 |
| Package Height (mm) | 15.87 |
| Seated Plane Height (mm) | 19.1 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 700V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 7A |
| Maximum Drain Source Resistance | 1800@10VmOhm |
| Typical Gate Charge @ Vgs | 20.5@10VnC |
| Typical Gate Charge @ 10V | 20.5nC |
| Typical Input Capacitance @ Vds | 978@25VpF |
| Maximum Power Dissipation | 38500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 6USE7 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Alpha & Omega AOTF7N70 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.