N-channel enhancement mode power MOSFET featuring a 600V drain-source voltage and 2.5A continuous drain current. This single-element transistor is housed in a TO-251 plastic package with through-hole mounting and a 3-pin configuration including a tab. Key electrical characteristics include a maximum gate-source voltage of ±30V, a low drain-source on-resistance of 3500mΩ at 10V, and a typical gate charge of 9.9nC at 10V. Operating temperature range spans from -50°C to 150°C, with a maximum power dissipation of 56.8W.
PackageTO-251
MountingThrough Hole
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Technical Specifications
Alpha & Omega AOU3N60 technical specifications.
General
| Package/Case | TO-251 |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 2.3 |
| Package Height (mm) | 5.55 |
| Seated Plane Height (mm) | 8.6 |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 2.5A |
| Maximum Drain Source Resistance | 3500@10VmOhm |
| Typical Gate Charge @ Vgs | 9.9@10VnC |
| Typical Gate Charge @ 10V | 9.9nC |
| Typical Input Capacitance @ Vds | 304@25VpF |
| Maximum Power Dissipation | 56800mW |
| Min Operating Temperature | -50°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 6USE7 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Alpha & Omega AOU3N60 Datasheet
Download the complete datasheet for Alpha & Omega AOU3N60 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.