Ultra High Frequency Band RF Power Field-Effect Transistor, a 2-element, N-Channel, Silicon Metal-oxide Semiconductor FET. Features a 4-terminal ceramic package with dual terminal positions. Designed for RF power applications, this component is ROHS compliant.
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Technical Specifications
Ampleon BLF578XR,112 technical specifications.
General
| Number of Terminals | 4 |
| Terminal Position | DUAL |
| Number of Elements | 2 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Ampleon BLF578XR,112 Datasheet
Download the complete datasheet for Ampleon BLF578XR,112 to view detailed technical specifications.
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