Ampleon
BLF8G10LS-300P
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4
Quick Jump:
Technical Specifications
Ampleon BLF8G10LS-300P technical specifications.
General
| Number of Terminals | 4 |
| Terminal Position | DUAL |
| Number of Elements | 2 |
Compliance
| REACH | unknown |
| Military Spec | False |
Datasheet
Ampleon BLF8G10LS-300P Datasheet
Download the complete datasheet for Ampleon BLF8G10LS-300P to view detailed technical specifications.
No datasheet is available for this part.