
NPN Bipolar Junction Transistor (BJT) featuring monolithic dual matching. Offers a minimum hFE of 500 and a transition frequency of 450MHz. Maximum collector current is 25mA with a collector-emitter voltage of 45V. Packaged in a TO-78 through-hole mount, operating from -55°C to 125°C.
Analog Devices MAT01AHZ technical specifications.
Download the complete datasheet for Analog Devices MAT01AHZ to view detailed technical specifications.
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