
NPN Bipolar Junction Transistor (BJT) featuring monolithic dual matching. Offers a minimum hFE of 500 and a transition frequency of 450MHz. Maximum collector current is 25mA with a collector-emitter voltage of 45V. Packaged in a TO-78 through-hole mount, operating from -55°C to 125°C.
Analog Devices MAT01AHZ technical specifications.
| Package/Case | TO-78 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 120mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 800mV |
| Continuous Collector Current | 25mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 450MHz |
| Height | 4.7mm |
| hFE Min | 500 |
| Lead Free | Contains Lead |
| Length | 9.4mm |
| Max Collector Current | 25mA |
| Max Frequency | 450MHz |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Package Quantity | 100 |
| Packaging | Bulk |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 450MHz |
| Width | 9.4mm |
| RoHS | Compliant |
Download the complete datasheet for Analog Devices MAT01AHZ to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
