Dual-matched NPN bipolar junction transistor (BJT) for audio applications. Features a minimum hFE of 200 and a transition frequency of 200MHz. Collector-emitter voltage (VCEO) is 40V, with a maximum collector current of 20mA. Packaged in a TO-78-6 through-hole mount, operating from -40°C to 85°C.
Frequency200MHz
PackageTO-78-6
MountingThrough Hole
PolarityNPN
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Technical Specifications
Analog Devices MAT12AHZ technical specifications.
General
Package/Case
TO-78-6
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
50mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
200mV
Diameter
9.4mm
Emitter Base Voltage (VEBO)
40V
Gain Bandwidth Product
200MHz
Height
4.7mm
hFE Min
200
Lead Free
Contains Lead
Max Collector Current
20mA
Max Frequency
200MHz
Max Operating Temperature
85°C
Min Operating Temperature
-40°C
Mount
Through Hole
Package Quantity
100
Packaging
Box
Polarity
NPN
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
200MHz
Compliance
RoHS
Compliant
Datasheet
Analog Devices MAT12AHZ Datasheet
Download the complete datasheet for Analog Devices MAT12AHZ to view detailed technical specifications.
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