Dual-matched NPN bipolar junction transistor (BJT) for audio applications. Features a minimum hFE of 200 and a transition frequency of 200MHz. Collector-emitter voltage (VCEO) is 40V, with a maximum collector current of 20mA. Packaged in a TO-78-6 through-hole mount, operating from -40°C to 85°C.
Frequency200MHz
PackageTO-78-6
MountingThrough Hole
PolarityNPN
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Technical Specifications
Analog Devices MAT12AHZ technical specifications.
General
| Package/Case | TO-78-6 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 50mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 200mV |
| Diameter | 9.4mm |
| Emitter Base Voltage (VEBO) | 40V |
| Gain Bandwidth Product | 200MHz |
| Height | 4.7mm |
| hFE Min | 200 |
| Lead Free | Contains Lead |
| Max Collector Current | 20mA |
| Max Frequency | 200MHz |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Through Hole |
| Package Quantity | 100 |
| Packaging | Box |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
Compliance
| RoHS | Compliant |
Datasheet
Analog Devices MAT12AHZ Datasheet
Download the complete datasheet for Analog Devices MAT12AHZ to view detailed technical specifications.
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