Monolithic quad transistor featuring NPN polarity, designed for high-frequency applications with a transition frequency of 300MHz. Offers a collector-emitter breakdown voltage of 40V and a maximum collector current of 30mA. This component is housed in an SOIC package, suitable for both through-hole and surface mount configurations. Operating temperature range spans from -25°C to 85°C, with a maximum power dissipation of 500mW.
Frequency300MHz
PackageSOIC
MountingThrough Hole, Surface Mount
PolarityNPN
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Technical Specifications
Analog Devices MAT14ARZ-R7 technical specifications.
General
Package/Case
SOIC
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
60mV
Frequency
300MHz
Lead Free
Contains Lead
Max Breakdown Voltage
40V
Max Collector Current
30mA
Max Operating Temperature
85°C
Min Operating Temperature
-25°C
Max Power Dissipation
500mW
Mount
Through Hole, Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
NPN
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
300MHz
Compliance
RoHS
Compliant
Datasheet
Analog Devices MAT14ARZ-R7 Datasheet
Download the complete datasheet for Analog Devices MAT14ARZ-R7 to view detailed technical specifications.
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