Dual NPN Bipolar Junction Transistor for audio applications, featuring matched characteristics. Offers a collector-emitter voltage (VCEO) of 40V and a collector-emitter breakdown voltage of 40V. Achieves a gain bandwidth product and transition frequency of 200MHz, with a maximum collector current of 20mA. Packaged in an SOIC surface-mount case, this RoHS compliant component operates within a temperature range of -40°C to 85°C.
Frequency200MHz
PackageSOIC
MountingSurface Mount
PolarityNPN
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Technical Specifications
Analog Devices SSM2212RZ technical specifications.
General
Package/Case
SOIC
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
50mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
200mV
Frequency
200MHz
Gain Bandwidth Product
200MHz
Height
1.5mm
hFE Min
300
Lead Free
Contains Lead
Length
5mm
Max Collector Current
20mA
Max Frequency
10kHz
Max Operating Temperature
85°C
Min Operating Temperature
-40°C
Mount
Surface Mount
Number of Elements
2
Package Quantity
98
Packaging
Rail/Tube
Polarity
NPN
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
200MHz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Analog Devices SSM2212RZ Datasheet
Download the complete datasheet for Analog Devices SSM2212RZ to view detailed technical specifications.
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