Dual NPN Bipolar Junction Transistor for audio applications, featuring matched characteristics. Offers a collector-emitter voltage (VCEO) of 40V and a collector-emitter breakdown voltage of 40V. Achieves a gain bandwidth product and transition frequency of 200MHz, with a maximum collector current of 20mA. Packaged in an SOIC surface-mount case, this RoHS compliant component operates within a temperature range of -40°C to 85°C.
Analog Devices SSM2212RZ technical specifications.
| Package/Case | SOIC |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 50mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 200mV |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| Height | 1.5mm |
| hFE Min | 300 |
| Lead Free | Contains Lead |
| Length | 5mm |
| Max Collector Current | 20mA |
| Max Frequency | 10kHz |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 98 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for Analog Devices SSM2212RZ to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.